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Manufacturer Packaging Series RoHS Speed Diode Type Part Status Mounting Type Package / Case Capacitance @ Vr, F Supplier Device Package Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature - Junction Voltage - Forward (Vf) (Max) @ 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Images Part Number Manufacturer Stock Package Description Inquiry
RGL41GHE3/96 RGL41GHE3/96 Vishay General Semiconductor - Diodes Division 13,651 DO-213AB, MELF (Glass) DIODE GEN PURP 400V 1A DO213AB

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VB20150S-M3/4W VB20150S-M3/4W Vishay General Semiconductor - Diodes Division 11,399 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB DIODE SCHOTTKY 20A 150V TO-263AB

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RGL41JHE3/96 RGL41JHE3/96 Vishay General Semiconductor - Diodes Division 11,041 DO-213AB, MELF (Glass) DIODE GEN PURP 600V 1A DO213AB

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SBR12A45SP5-13 SBR12A45SP5-13 Diodes Incorporated 11,011 PowerDI™ 5 DIODE SBR 45V 12A POWERDI5

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S3D V6G S3D V6G Taiwan Semiconductor Corporation 11,932 DO-214AB, SMC DIODE GEN PURP 200V 3A DO214AB

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VB30100SG-E3/8W VB30100SG-E3/8W Vishay General Semiconductor - Diodes Division 11,629 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB DIODE SCHOTTKY 100V 30A TO263AB

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VB30100SG-E3/4W VB30100SG-E3/4W Vishay General Semiconductor - Diodes Division 12,348 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB DIODE SCHOTTKY 100V 30A TO263AB

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VB30100SG-M3/8W VB30100SG-M3/8W Vishay General Semiconductor - Diodes Division 11,855 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB DIODE SCHOTTKY 30A 100V TO-263AB

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ES3DB M4G ES3DB M4G Taiwan Semiconductor Corporation 12,230 DO-214AA, SMB DIODE GEN PURP 200V 3A DO214AA

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VB30100SG-M3/4W VB30100SG-M3/4W Vishay General Semiconductor - Diodes Division 10,585 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB DIODE SCHOTTKY 30A 100V TO-263AB

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CDBA3100LR-HF CDBA3100LR-HF Comchip Technology 11,234 DO-214AC, SMA DIODE SCHOTTKY 100V 3A DO214AC

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FESB8AT-E3/81 FESB8AT-E3/81 Vishay General Semiconductor - Diodes Division 14,417 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB DIODE GEN PURP 50V 8A TO263AB

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S1BL RUG S1BL RUG Taiwan Semiconductor Corporation 13,385 DO-219AB DIODE GEN PURP 100V 1A SUB SMA

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FESB8BT-E3/81 FESB8BT-E3/81 Vishay General Semiconductor - Diodes Division 13,672 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB DIODE GEN PURP 100V 8A TO263AB

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S1DL RUG S1DL RUG Taiwan Semiconductor Corporation 13,205 DO-219AB DIODE GEN PURP 200V 1A SUB SMA

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FESB8CT-E3/81 FESB8CT-E3/81 Vishay General Semiconductor - Diodes Division 10,012 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB DIODE GEN PURP 150V 8A TO263AB

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S1GL RUG S1GL RUG Taiwan Semiconductor Corporation 10,442 DO-219AB DIODE GEN PURP 400V 1A SUB SMA

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FESB8DT-E3/81 FESB8DT-E3/81 Vishay General Semiconductor - Diodes Division 12,178 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB DIODE GEN PURP 200V 8A TO263AB

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S1JL RUG S1JL RUG Taiwan Semiconductor Corporation 14,563 DO-219AB DIODE GEN PURP 600V 1A SUB SMA

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GIB1401-E3/81 GIB1401-E3/81 Vishay General Semiconductor - Diodes Division 11,281 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB DIODE GEN PURP 50V 8A TO263AB

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