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Manufacturer Packaging Series ProductStatus FETType Voltage-Breakdown(V(BR)GSS) DraintoSourceVoltage(Vdss) Current-Drain(Idss)@Vds(Vgs=0) CurrentDrain(Id)-Max Voltage-Cutoff(VGSoff)@Id InputCapacitance(Ciss)(Max)@Vds Resistance-RDS(On) Power-Max OperatingTemperature MountingType























































































































































































































































































































































































































































































































































































































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Images Part Number Manufacturer Stock Package Description Inquiry
J174,126 J174,126 NXP USA Inc. 2,211 TO-226-3, TO-92-3 (TO-226AA) Formed Leads JFET P-CH 30V 400MW TO92-3

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J176,126 J176,126 NXP USA Inc. 3,195 TO-226-3, TO-92-3 (TO-226AA) Formed Leads JFET P-CH 30V 400MW TO92-3

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J108,126 J108,126 NXP USA Inc. 3,339 TO-226-3, TO-92-3 (TO-226AA) Formed Leads JFET N-CH 25V 0.4W SOT54

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J110,126 J110,126 NXP USA Inc. 3,113 TO-226-3, TO-92-3 (TO-226AA) Formed Leads JFET N-CH 25V 0.4W SOT54

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IJW120R070T1FKSA1 IJW120R070T1FKSA1 Infineon Technologies 1,022 - IJW120R070 - POWER FIELD-EFFECT

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